Title :
PC-1D modeling of depletion layer recombination in GaAs solar cells
Author :
Olsen, Larry ; Huber, Daniel ; Dunham, Glen ; Addis, F.
Author_Institution :
Washington State Univ., Richland, WA, USA
Abstract :
Theoretical studies of current-loss mechanisms in GaAs solar cells using PC-1D are presented. The contribution to current-voltage characteristics of depletion-layer recombination via traps at various locations in the forbidden gap has been modeled using PC-1D. The results of these studies are used to interpret experimental data for high-efficiency GaAs solar cells. It is found that the double-mechanism characteristic observed for high-efficiency GaAs cells can usually be interpreted in terms of two mechanisms acting in parallel, one due to recombination via a midgap trap with n=2 and another at higher voltages due to emitter/base recombination with n=1, or a component characterized by n on the order of 1.1 to 1.5 due to recombination via a trap located between midgap and the conduction or valence band edge
Keywords :
III-V semiconductors; electron-hole recombination; electronic engineering computing; gallium arsenide; semiconductor device models; solar cells; GaAs solar cells; PC-1D; conduction band; current-loss mechanisms; current-voltage characteristics; depletion layer recombination; double-mechanism characteristic; emitter/base recombination; forbidden gap; midgap trap; semiconductor; traps; valence band edge; Equations; Finite element methods; Gallium arsenide; Photonic band gap; Photovoltaic cells; Radiative recombination; Silicon; Temperature distribution; Tunneling; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111658
