Title :
Temperature Dependent Defect Level for an Ionic Failure Mechanism
Author :
Hemmert, Richard S.
Author_Institution :
IBM General Technology Division, East Fishkill, Hopewell Junction, New York 12533. Tel: (914) 897-9080
Abstract :
On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.
Keywords :
Failure analysis; Gettering; Glass; MOSFET circuits; Polarization; Pollution measurement; Stability; Temperature dependence; Temperature measurement; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1981.362991
