• DocumentCode
    2610672
  • Title

    Temperature Dependent Defect Level for an Ionic Failure Mechanism

  • Author

    Hemmert, Richard S.

  • Author_Institution
    IBM General Technology Division, East Fishkill, Hopewell Junction, New York 12533. Tel: (914) 897-9080
  • fYear
    1981
  • fDate
    29677
  • Firstpage
    172
  • Lastpage
    174
  • Abstract
    On N-channel MOSFET devices, phosphosilicate glass maintains threshold stability by gettering ionic (sodium) contaminants, typically to 250°C. However, defects can affect the phosphosilicate glass and substantially reduce its gettering ability. The defect level then becomes temperature dependent, which if not taken into account, results in erroneous reliability projections.
  • Keywords
    Failure analysis; Gettering; Glass; MOSFET circuits; Polarization; Pollution measurement; Stability; Temperature dependence; Temperature measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1981. 19th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1981.362991
  • Filename
    4208390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610672