Small signal modeling of the MOSOS capacitor

Author

Gaitan, Michael ; Roitman, Peter

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

48

Lastpage

49

Abstract

Summary form only given. The high-frequency small-signal sinusoidal steady-state response of the 2-terminal MOSOS (metal-oxide-silicon-oxide-silicon) capacitor is solved numerically using perturbation analysis of the basic semiconductor equations. The model includes the effects of a floating semiconductor region, interface traps and nonuniform doping. Simulations show a difference between the high-frequency and quasi-static solutions for accumulation. This is due to a dipole layer which exists in the semiconductor film. The internal small-signal currents which exhibit the dipole layer are presented

Keywords

interface electron states; metal-insulator-semiconductor devices; perturbation theory; semiconductor device models; semiconductor-insulator boundaries; MOSOS capacitor; Si-SiO₂ interface; accumulation; dipole layer; floating semiconductor region; high-frequency small-signal sinusoidal steady-state response; interface traps; internal small-signal currents; nonuniform doping; numerical solution; perturbation analysis; quasi-static solutions; small signal model; Electron traps; Equations; Frequency conversion; Insulation; MOS capacitors; Semiconductor device doping; Semiconductor films; Semiconductor process modeling; Signal analysis; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69759

Filename

69759