Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure

Author

Parish, G. ; Musca, C.A. ; Siliquini, J.F. ; Antoszewski, J. ; Dell, J.M. ; Nener, B.D. ; Faraone, L. ; Gouws, G.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

46

Lastpage

49

Abstract

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 μm and 8-12 μm, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 μm, and LWIR cutoff of 10.5 μm

Keywords

II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photoconducting devices; semiconductor device models; semiconductor technology; 3 to 5 micron; 8 to 12 micron; HgCdTe; LWIR cutoff; MWIR cutoff; absorbing layer; dual-band HgCdTe infrared detector; electrical barrier; fabrication; model; monolithic photoconductive device; photosensitive layer; wide bandgap isolating layer; Atmospheric modeling; Crosstalk; Dual band; Fabrication; Infrared detectors; Optical imaging; Photoconducting devices; Photonic band gap; Prototypes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610061

Filename

610061