Title :
Fabrication and modelling of a prototype dual-band HgCdTe infrared detector structure
Author :
Parish, G. ; Musca, C.A. ; Siliquini, J.F. ; Antoszewski, J. ; Dell, J.M. ; Nener, B.D. ; Faraone, L. ; Gouws, G.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 μm and 8-12 μm, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers. A comprehensive device model has been developed and the technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The fabricated detectors have an MWIR cutoff of 5.0 μm, and LWIR cutoff of 10.5 μm
Keywords :
II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photoconducting devices; semiconductor device models; semiconductor technology; 3 to 5 micron; 8 to 12 micron; HgCdTe; LWIR cutoff; MWIR cutoff; absorbing layer; dual-band HgCdTe infrared detector; electrical barrier; fabrication; model; monolithic photoconductive device; photosensitive layer; wide bandgap isolating layer; Atmospheric modeling; Crosstalk; Dual band; Fabrication; Infrared detectors; Optical imaging; Photoconducting devices; Photonic band gap; Prototypes; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610061
