• DocumentCode
    2610907
  • Title

    Solving Boltzmann Transport Equation without Monte-Carlo algorithms - new methods for industrial TCAD applications

  • Author

    Meinerzhagen, B. ; Pham, A.T. ; Hong, S.-M. ; Jungemann, C.

  • Author_Institution
    BST, Tech. Univ. Braunschweig, Braunschweig, Germany
  • fYear
    2010
  • fDate
    6-8 Sept. 2010
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    The Drift-Diffusion model is still by far the most frequently used numerical device model in industry today. One important reason for this success is the robust numerical implementation of this model providing CPU efficient DC, AC, transient, and noise simulations with high accuracy and high convergence reliability. On the other hand, many of todays design applications vary strain, crystal and channel orientation, material composition, and the carrier confinement. Such applications certainly require the solution of the Boltzmann Transport Equation in order to be predictive. It will be demonstrated in this paper that with new alternative discretization and solution methods avoiding the Monte-Carlo algorithm many of the favorable numerical properties of the traditional Drift-Diffusion model can be transferred to numerical device models that include the solution of the Boltzmann Transport Equation.
  • Keywords
    Boltzmann equation; convergence of numerical methods; technology CAD (electronics); AC simulation; Boltzmann transport equation; CPU efficient simulations; DC simulation; alternative discretization method; alternative solution method; carrier confinement; channel orientation; crystal orientation; drift-diffusion model; industrial TCAD; material composition; noise simulation; numerical accuracy; numerical convergence reliability; numerical device models; strain variation; technology computer-aided design; transient simulation; Accuracy; Equations; Logic gates; MOSFET circuits; Mathematical model; Numerical models; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
  • Conference_Location
    Bologna
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-7701-2
  • Electronic_ISBN
    1946-1569
  • Type

    conf

  • DOI
    10.1109/SISPAD.2010.5604501
  • Filename
    5604501