DocumentCode :
2610940
Title :
Electron Microscopy and Failure Analysis
Author :
Marcus, R.B. ; Sheng, T.T.
Author_Institution :
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
fYear :
1981
fDate :
29677
Firstpage :
269
Lastpage :
275
Abstract :
As VLSI technology moves in a direction toward more complex chips with increasingly smaller design rules, device failure analysts have been asked to produce microscope images of VLSI features with increasingly greater resolution. This has led to the increased use of the transmission electron microscope (TEM) as an integral part of process development/failure analysis efforts. The major obstacle to the use of the TEM has been the problem of sample preparation; satisfactory sample preparation methods have been developed, and these methods and the use of a TEM test pattern are described. Both the TEM and scanning electron microscope have other modes of operation (in addition to morphology study) that are relevant and in some cases essential to process development/failure analysis effort, and these are described: junction delineation, phase identification, chemical analysis, electrical mapping and microdefect analysis.
Keywords :
Chemical analysis; Electron microscopy; Failure analysis; Image analysis; Image resolution; Morphology; Scanning electron microscopy; Testing; Transmission electron microscopy; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1981.363008
Filename :
4208407
Link To Document :
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