Junctions made using pCdTe films grown with ion-assisted doping [solar cells]

Author

Sharps, Paul ; Fahrenbruch, A.L. ; Lopez-Otero, A. ; Schöfthaler, M. ; Bube, R.

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

fYear

1990

fDate

21-25 May 1990

Firstpage

493

Abstract

This work is part of a continuing study of p-CdTe thin films grown by ion-assisted doping during vacuum evaporation. Ion-assisted doping has clearly demonstrated an ability to control the carrier density in p-CdTe. Results are reported from In/p-CdTe Schottky barriers and from n-CdS/p-CdTe heterojunctions prepared with a systematic variation in the p-CdTe carrier density. The ion-assisted doping process itself appears to be responsible for a decrease in the J_sc through a reduction in the minority carrier lifetime and in the interface collection function h(0). J_sc increased through the use of a two-layer CdTe structure in which undoped CdTe is at the CdS/CdTe interface

Keywords

II-VI semiconductors; Schottky effect; cadmium compounds; carrier density; carrier lifetime; ion implantation; minority carriers; p-n heterojunctions; semiconductor doping; semiconductor thin films; solar cells; vacuum deposited coatings; CdS-CdTe heterojunctions; CdTe thin films; In-CdTe; Schottky barriers; carrier density; interface collection function; ion-assisted doping; minority carrier lifetime; semiconductor; vacuum evaporation; Atomic layer deposition; Charge carrier density; Doping; Heterojunctions; Ion sources; Photovoltaic cells; Schottky barriers; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111672

Filename

111672