Title :
Improvement of WSe2 solar cells by doping?
Author :
Vögt, M. ; Lux-Steiner, M. ; Dolatzoglou, P. ; Reetz, W. ; Bumuller, B. ; Bucher, E.
Author_Institution :
Konstanz Univ., Germany
Abstract :
In order to, improve the ohmic back contact of ZnO/WSe2 solar cells, W, Ta, Mo, and Au have been investigated as contact materials. After annealing, RF-magnetron-sputtered Mo contacts exhibited the lowest contact resistance (0.006 Ωcm2). ZnO/WSe2/Mo solar cells with a series resistance of about 2.7 Ωcm2 and a fill factor of up to 67% were fabricated. Compared to earlier published fill factor values, this gives an improvement of more than 10%. The influence of the tungsten source material as well as the dopants Mo, Cu, Cr, and V on ZnO/WSe2 solar cells was studied. The highest open-circuit voltage of 515 mV (85-mW/cm2 illumination) was obtained with a Cu-doped diode. All Mo-doped solar cell had the highest short circuit current density (18.0 mA/cm2). Mo and O2-doped solar cells exhibit the best power conversion efficiencies, up to 6.7%. All diodes were characterized by temperature-dependent I-V, frequency and voltage-dependent impedance, spectral response and electron-beam-induced current (EBIC) measurements
Keywords :
II-VI semiconductors; chalcogenide glasses; electrical contacts; molybdenum; short-circuit currents; solar cells; tungsten compounds; zinc compounds; RF magnetron sputtering; ZnO-WSe2-Mo solar cells; contact materials; electron-beam-induced current measurements; fill factor; frequency-dependent impedance; ohmic back contact; open-circuit voltage; power conversion efficiencies; series resistance; short circuit current density; spectral response; temperature-dependent I-V; voltage-dependent impedance; Annealing; Chromium; Contact resistance; Diodes; Gold; Lighting; Photovoltaic cells; Tungsten; Voltage; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111676
