• DocumentCode
    2611060
  • Title

    Hot electron effects on AlGaAs/InGaAs/GaAs PHEMT´s under accelerated DC stresses and comparison with InGaP PHEMT´s

  • Author

    Huang, Hou Kuei ; Wang, C.S. ; Wang, Y.H.

  • fYear
    2003
  • fDate
    2003
  • Firstpage
    57
  • Lastpage
    68
  • Keywords
    Acceleration; Acoustical engineering; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; PHEMTs; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs Reliability Workshop, 2003. Proceedings
  • Print_ISBN
    0-7908-0104-3
  • Type

    conf

  • DOI
    10.1109/GAASRW.2003.183767
  • Filename
    1397318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2611060