DocumentCode
2611071
Title
Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings
Author
Nguyen, C.D. ; Kuligk, A. ; Vexler, M.I. ; Klawitter, M. ; Beyer, V. ; Melde, T. ; Czernohorsky, M. ; Meinerzhagen, B.
Author_Institution
BST, Tech. Univ. Braunschweig, Braunschweig, Germany
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
261
Lastpage
264
Abstract
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the first time.
Keywords
NAND circuits; flash memories; hot carriers; random-access storage; semiconductor process modelling; NAND flash memory strings; hot electron induced mechanism; nonvolatile memories; physical simulation; program disturb mechanism; Doping; Electric potential; Logic gates; Programming; Semiconductor process modeling; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604512
Filename
5604512
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