Title :
A systematic approach of statistical modeling and its application to CMOS circuits
Author :
Chen, Jim ; Styblinski, M.A.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A systematic approach of statistical modeling is developed to analyze and model statistical variations of CMOS transistor model parameters for statistical circuit simulation. The proposed methodology is based on several standard statistical techniques, and its accuracy and efficiency are verified by several examples. The efficiency of the method lies in the reduction of dimensions of parameter space without losing much statistical information
Keywords :
CMOS integrated circuits; circuit analysis computing; integrated circuit modelling; network parameters; statistical analysis; CMOS circuits; circuit simulation; parameter space; statistical information; statistical modeling; statistical variations; transistor model parameters; Circuit simulation; Circuit synthesis; Fabrics; Integrated circuit modeling; Minimization methods; Principal component analysis; Production; Scattering parameters; Semiconductor device modeling; Yield estimation;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.394096
