Title :
Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction
Author :
Tanaka, A. ; Oritsuki, Y. ; Kikuchihara, Hideyuki ; Miyake, M. ; Mattausch, Hans Jurgen ; Miura-Mattausch, M. ; Liu, Yanbing ; Green, Keith Evan
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
High-voltage MOSFETs enable wide bias-range applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the potential underneath the gate overlap region, the model can reproduce I-V characteristics for a wide range of structure variations without additional fitting parameters.
Keywords :
MOSFET; circuit optimisation; semiconductor device models; 2D bias control; accurate device; circuit optimization; circuit performance prediction; compact model HiSIM_HV 2.0.0; current-voltage characteristics; high-voltage MOSFET; internal node potential; overlap region; Biological system modeling; Electric potential; Integrated circuit modeling; MOSFETs; Mathematical model; Resistors; Simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604515
