DocumentCode
2611124
Title
Investigation of reliability for C-doped InP/InGaAs/InP HBTs under high current density operation
Author
Feng, Kevin T. ; Nguyen, Nguyen X. ; Chanh Nguyen
fYear
2003
fDate
2003
Firstpage
117
Lastpage
134
Keywords
Current density; Dielectric losses; Dielectric thin films; Foundries; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Life testing; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN
0-7908-0104-3
Type
conf
DOI
10.1109/GAASRW.2003.183771
Filename
1397326
Link To Document