DocumentCode :
2611124
Title :
Investigation of reliability for C-doped InP/InGaAs/InP HBTs under high current density operation
Author :
Feng, Kevin T. ; Nguyen, Nguyen X. ; Chanh Nguyen
fYear :
2003
fDate :
2003
Firstpage :
117
Lastpage :
134
Keywords :
Current density; Dielectric losses; Dielectric thin films; Foundries; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Life testing; Temperature; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 2003. Proceedings
Print_ISBN :
0-7908-0104-3
Type :
conf
DOI :
10.1109/GAASRW.2003.183771
Filename :
1397326
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2611124
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