Title :
Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure
Author :
Karouta, F. ; Wellen, J.S. ; Abu-Zeid, O. ; Acket, G.A. ; van der Vleuten, W.C.
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 μm of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current
Keywords :
III-V semiconductors; etching; gallium arsenide; gradient index optics; laser cavity resonators; laser mirrors; laser transitions; optical fabrication; quantum well lasers; 0.5 mW; 29 mum; 70 mA; 805 nm; 830 nm; 855 nm; GRINSCH-QW GaAs-based structure; GaAs-In0.2Ga0.8As-Al0.2Ga 0.8As; cavity length; laser operation; output power; peaks; threshold current; very short wet etched mirror lasers; Chemical lasers; Chemical processes; Gallium arsenide; Laser theory; Mirrors; Monolithic integrated circuits; Power lasers; Threshold current; Waveguide lasers; Wet etching;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610063
