DocumentCode :
2611187
Title :
Elimination of Silicon Electromigration in Contacts by the use of an Interposed Barrier Metal
Author :
Gargini, P.A. ; Tseng, C. ; Woods, M.H.
Author_Institution :
INTEL CORPORATION, 3065 BOWERS AVENUE, SANTA CLARA, CALIFORNIA 95051
fYear :
1982
fDate :
30011
Firstpage :
66
Lastpage :
76
Keywords :
Acceleration; Aluminum; Computer aided software engineering; Current density; Delay estimation; Electromigration; Failure analysis; Silicon; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1982.363024
Filename :
4208426
Link To Document :
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