Title :
Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs
Author :
Lee, Seonghearn ; Gopinath, Anand ; Pachuta, Steven J.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Determination of the experimental value of minority electron mobility μnp in p-type GaAs doped to 3.0×1019 cm-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/Ie and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm2/V-s is in good agreement with theoretical predictions which show the increase of μnp with increasing doping concentrations at doping range larger than 1019 cm-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the AlxGa 1-xAs/GaAs composition graded base HBT
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; 300 K; AlGaAs-GaAs; base transit time; composition graded base HBT; doping concentrations; experimental value; extrinsic parasitics; minority electron mobility; mobility measurement; parameter extraction technique; semiconductors; total emitter-collector transit time; Current measurement; Cutoff frequency; Doping; Electron mobility; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Performance evaluation; Time measurement;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.169997
