Title :
Towards high efficiency electrodeposited CdS/CdTe thin film cells
Author :
Morris, G. ; Tanner, P. ; Tottszer, A.
Author_Institution :
Dept. of Chem., Queensland Univ., Qld., Australia
Abstract :
Glass/ITO/CdS/CdTe/Cu-Au solar cells with efficiencies up to 13.1% were fabricated. The reasons for the high Jsc values, about 28 mA cm-2, are discussed. Current collection occurs at energies as high as 3.65 eV. Quantum spectral yield data at various voltages showed a high current collection efficiency and showed that loss mechanisms in the bulk were small compared with those at the interface. The density of interface states was greater than 1011 eV-1 cm-2 and was the main factor reducing Uoc and the fill factor. Auger spectra showed that in the best cells the CdS layer did not spread much during processing. Photoluminescence data suggest that the material bandgap was lowered at the CdS/CdTe interface. Projected efficiencies of near 17% should be achievable
Keywords :
Auger effect; II-VI semiconductors; cadmium compounds; electrodeposits; energy gap; interface electron states; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor thin films; solar cells; 13 percent; Auger spectra; CdS-CdTe solar cells; bandgap; current collection; electrodeposition; fill factor; high efficiency; interface states density; loss mechanisms; photoluminescence; quantum spectral yield; solar cells; thin film; Anodes; Costs; Electrodes; Fabrication; Glass; Gold; Indium tin oxide; Photovoltaic cells; Tellurium; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111685
