Towards high efficiency electrodeposited CdS/CdTe thin film cells

Author

Morris, G. ; Tanner, P. ; Tottszer, A.

Author_Institution

Dept. of Chem., Queensland Univ., Qld., Australia

fYear

1990

fDate

21-25 May 1990

Firstpage

575

Abstract

Glass/ITO/CdS/CdTe/Cu-Au solar cells with efficiencies up to 13.1% were fabricated. The reasons for the high J_sc values, about 28 mA cm^-2, are discussed. Current collection occurs at energies as high as 3.65 eV. Quantum spectral yield data at various voltages showed a high current collection efficiency and showed that loss mechanisms in the bulk were small compared with those at the interface. The density of interface states was greater than 10¹¹ eV^-1 cm^-2 and was the main factor reducing U_oc and the fill factor. Auger spectra showed that in the best cells the CdS layer did not spread much during processing. Photoluminescence data suggest that the material bandgap was lowered at the CdS/CdTe interface. Projected efficiencies of near 17% should be achievable

Keywords

Auger effect; II-VI semiconductors; cadmium compounds; electrodeposits; energy gap; interface electron states; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor thin films; solar cells; 13 percent; Auger spectra; CdS-CdTe solar cells; bandgap; current collection; electrodeposition; fill factor; high efficiency; interface states density; loss mechanisms; photoluminescence; quantum spectral yield; solar cells; thin film; Anodes; Costs; Electrodes; Fabrication; Glass; Gold; Indium tin oxide; Photovoltaic cells; Tellurium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111685

Filename

111685