Title :
Future high density memories for computing applications: Device behavior and modeling challenges
Author :
Spadini, Gianpaolo ; Karpov, Ilya V. ; Kencke, David L.
Author_Institution :
NAND Solution Group, INTEL Corp., Santa Clara, CA, USA
Abstract :
Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.
Keywords :
digital storage; phase change memories; computer memory; cross point arrays; device behavior; high density memories; phase change elements; Phase change materials; Phase change memory; Programming; Random access memory; Resistance; Switches;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604521
