DocumentCode
2611262
Title
Future high density memories for computing applications: Device behavior and modeling challenges
Author
Spadini, Gianpaolo ; Karpov, Ilya V. ; Kencke, David L.
Author_Institution
NAND Solution Group, INTEL Corp., Santa Clara, CA, USA
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
223
Lastpage
226
Abstract
Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to model them is analyzed.
Keywords
digital storage; phase change memories; computer memory; cross point arrays; device behavior; high density memories; phase change elements; Phase change materials; Phase change memory; Programming; Random access memory; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604521
Filename
5604521
Link To Document