Title :
A New Latent Failure Mechanism for Schottky Barrier Diodes with Al-Cu-Si Metallurgy
Author_Institution :
IBM General Technology Division, Essex Junction, VT 05452, (802) 769-4221
Abstract :
The defect responsible for anomalous leakage current in Al-Cu-Si metallized Schottky barrier diodes has been found. The defect is designated the "CuAl2/Si defect." A new latent failure mechanism associated with CuAl2/Si defects and inherent Schottky instability is modelled. Its ramification for Schottky reliability has been established. The nature of the defect, its formation, and leakage mechanism are given.
Keywords :
Copper; Crystallization; Failure analysis; Leakage current; Metallization; Schottky barriers; Schottky diodes; Silicon; Temperature; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
DOI :
10.1109/IRPS.1982.363029
