• DocumentCode
    2611329
  • Title

    Status of the direct solidification of silicon wafers by RAFT

  • Author

    Beck, A. ; Geissler, J. ; Helmreich, D.

  • Author_Institution
    Heliotronic GmbH, Burghausen, Germany
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    600
  • Abstract
    Aspects and limits of the ramp-assisted foil-casting technique (RAFT) have been studied in a continuously operating. prototype. Information on the practicability and technical feasibility of RAFT has been obtained for large-scale operation. In order to facilitate this transfer, a standard ramp system is defined together with pertinent process parameters
  • Keywords
    elemental semiconductors; semiconductor technology; silicon; solidification; Si wafers; ramp-assisted foil-casting; solidification; Coatings; Crystallization; Geometry; Heat transfer; Large-scale systems; Prototypes; Semiconductor films; Silicon; Standards development; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111689
  • Filename
    111689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2611329