Modeling of NQS effects in carbon nanotube transistors

Author

Claus, Martin ; Mothes, Sven ; Schröter, Michael

Author_Institution

Dept. of Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany

fYear

2010

fDate

6-8 Sept. 2010

Firstpage

203

Lastpage

206

Abstract

Time-dependent quantum simulations are used to rigorously identify non-quasi-static (NQS) effects in Carbon nanotube transistors. A complete physics-based small signal equivalent circuit is derived which captures important NQS effects for circuit design and simulation. This model agrees well with high-frequency measurements. Additionally, the impact of Schottky barriers on the kinetic inductance and the charging resistances is discussed and the role of the contact resistances is investigated.

Keywords

Schottky barriers; Schottky gate field effect transistors; carbon nanotubes; circuit simulation; contact resistance; equivalent circuits; integrated circuit design; C; NQS effects; Schottky barriers; carbon nanotube transistors; charging resistance; circuit design; circuit simulation; contact resistance; equivalent circuit; high-frequency measurements; nonquasistatic effects; time-dependent quantum simulations; Admittance; Electrical resistance measurement; Electron tubes; Equivalent circuits; Integrated circuit modeling; Solid modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Conference_Location

Bologna

ISSN

1946-1569

Print_ISBN

978-1-4244-7701-2

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2010.5604527

Filename

5604527