DocumentCode
2611357
Title
Reliability Hazards of Silver-Aluminum Substrate Bonds in MOS Devices
Author
Shukla, Rama ; Deo, Joe Singh
Author_Institution
Package Technology, Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051, (408) 987-6256
fYear
1982
fDate
30011
Firstpage
122
Lastpage
127
Abstract
Reliability of Aluminum wires bonded ultrasonically to silver metallization in cerdips was investigated, using a novel technique of in situ resistance measurement at high temperatures in controlled atmosphere. The failure mechanism in dry air was found to be due to selective oxidation of the Ag-Al alloy and activation energies were measured for various atmospheres. Moisture was shown to decrease the activation energy.
Keywords
Aluminum; Atmosphere; Bonding; Electrical resistance measurement; Hazards; MOS devices; Metallization; Silver; Temperature measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.363032
Filename
4208434
Link To Document