Compact process model of temperature dependent amorphization induced by ion implantation

A compact process model of the thickness of amorphous layer generated by high dose ion implantation was developed. The model takes into account implantation temperature that has strong effect on the damage accumulation and amorphization dynamics. The model is based on the results of Kinetic Monte Carlo simulation of implantation process and provides means for fast and precise calculation of amorphous layer thickness created by most common species used in semiconductor technology, with a wide range of implantation energies, doses and temperatures.