DocumentCode :
2611373
Title :
The Influence of Contamination on Aluminum-Gold Intermetallics
Author :
Charles, H.K., Jr. ; Romenesko, B.M. ; Wagner, G.D. ; Benson, R.C. ; Uy, O.M.
Author_Institution :
The Johns Hopkins University, Applied Physics Laboratory, Johns Hopkins Road, Laurel, Maryland 20707, (301) 953-7100
fYear :
1982
fDate :
30011
Firstpage :
128
Lastpage :
139
Abstract :
The uncontrolled formation of aluminum-gold intermetallics such as "purple plague" (AuA12) has not been considered a major semiconductor and/or hybrid reliability problem for several years, due to the advent of dependable lower temperature assembly processes which include: thermosonic gold ball bonding, ultrasonic aluminum wedge bonding, and epoxy attachment of both die and substrates. Today, however, intermetallics are beginning to appear again even in the lower temperature production environment. Isolated instances of ball bond lifting after long burn-ins at 125°C are being noted in high reliability programs. Rapid intermetallic consumption of second or tail bonds has been reported in hybrids with aluminum substrate metallization and gold thermosonic bonding. These processes are definitely accelerated by the 125°C thermal exposure, but have occurred so rapidly that contamination appears to be the principal driving source. A case study is presented in which a switch in substrate attach epoxy caused a catastrophic acceleration of intermetallic formation and widespread bond failures after the hybrids were exposed to a thermal testing environment. Details of the failure investigation process are presented including: impurity searches using energy dispersive X-ray, scanning Auger microprobe, and secondary ion mass spectrometry; epoxy cure cycle validations using residual gas analysis methods; the empirical use of the wire bond pull as the process validation method; and the analysis of sealed package ambient both pre and post burn-in.
Keywords :
Aluminum; Bonding; Contamination; Failure analysis; Gold; Intermetallic; Rapid thermal processing; Semiconductor device reliability; Substrates; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1982.363033
Filename :
4208435
Link To Document :
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