DocumentCode
2611387
Title
Precision Temperature Profiling in Highly Accelerated VLSI Life Test
Author
Yu, Chen Cheng ; Swinton, Alexander J.
Author_Institution
International Business Machines Corporation, All/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
fYear
1982
fDate
30011
Firstpage
140
Lastpage
143
Abstract
Discrete devices under high electrical stress can produce nonuniform junction temperature in a chip. Knowledge of precise junction temperature is essential for accurate reliability projection, since most failure mechanisms are highly temperature activated. Thermal conduction equations are solved analytically with appropriate boundary conditions for junction temperature calculation. Experiments performed on test chips show good correlation.
Keywords
Boundary conditions; Equations; Failure analysis; Life estimation; Life testing; Performance evaluation; Temperature; Thermal conductivity; Thermal stresses; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.363034
Filename
4208436
Link To Document