Development of the EPR technology for an oriented crystal growth semiconductor wafers

Author

Chibani, A. ; Sof, S. ; Hamoud, M. ; Gauthier, R. ; Pinard, P. ; Masri, K.

Author_Institution

Lab. Phys. de la Matiere, Villeurbanne, France

fYear

1990

fDate

21-25 May 1990

Firstpage

610

Abstract

The electron powder ribbon (EPR) method uses an electron beam irradiation of silicon and germanium powders to manufacture 4 cm×2 cm polycrystalline flat plates with a 200 μm thickness. The apparatus uses a triode electron gun to deposit an energy of between 50 and 500 W/mm² in a high-cryogenics vacuum (10^-7 torr). The new generation of EPR platelets is produced by one step crystallization. The crystal growth orientations are studied, and a computer aided driving of the electron beam to obtain linear temperature profiles and eliminate the stresses is developed

Keywords

crystal growth from melt; electron beam applications; elemental semiconductors; germanium; powder technology; semiconductor growth; silicon; 10^-7 torr; Ge; Si; electron beam irradiation; electron powder ribbon method; high-cryogenics vacuum; linear temperature profiles; oriented crystal growth; polycrystalline flat plates; semiconductor wafers; triode electron gun; Crystallization; Electron beams; Elementary particle vacuum; Germanium; Manufacturing; Paramagnetic resonance; Powders; Silicon; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111692

Filename

111692