Title :
Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles
Author :
Nishi, K. ; Mochizuki, M. ; Hayashi, H. ; Fukuda, K. ; Kurachi, I.
Author_Institution :
Kinki Univ. Tech. Coll., Kumano, Japan
Abstract :
A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.
Keywords :
Monte Carlo methods; boron; doping profiles; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si; Si:B; highly-accurate analytical 3D calculation; implanted surface; ion implanted dopant profiles; point-source model; well-tuned Monte Carlo simulation; Accuracy; Ion implantation; Mathematical model; Semiconductor process modeling; Silicon; Solid modeling; Three dimensional displays;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604532
