• DocumentCode
    261155
  • Title

    Increasing the speed and reducing a sensing delay of content addressable memory

  • Author

    Pavithra, N. ; Shalini, E. ; Babu, C. Ganesh

  • Author_Institution
    Dept. of ECE, Bannari Amman Inst. of Technol., Sathyamangalam, India
  • fYear
    2014
  • fDate
    27-28 Feb. 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    High speed content addressable memory design has high speed search function in a single clock. Parallel match line is used to compare. In robust Low power sense amplifier and high speed are highly sought-after in CAM designs. The value is given to search engine and its finds the value where its present. In the existing parity bit is introduced that leads to delay reduction at a cost of less than area. Furthermost in the proposed system PMOS transistor is used and cascaded and then output is found. Deadline is used in the proposed system to identify if the value is not present in the system.
  • Keywords
    MOSFET; content-addressable storage; CAM design; PMOS transistor; computer aided manufacturing; content addressable memory; parallel match line; parity bit; positive metal oxide semiconductor; search function; sensing delay reduction; Associative memory; Computer aided manufacturing; Computer architecture; Delays; Microprocessors; Power demand; Sensors; PMOS; content addressable memory (CAM); match-line;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Communication and Embedded Systems (ICICES), 2014 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-3835-3
  • Type

    conf

  • DOI
    10.1109/ICICES.2014.7034040
  • Filename
    7034040