DocumentCode
261155
Title
Increasing the speed and reducing a sensing delay of content addressable memory
Author
Pavithra, N. ; Shalini, E. ; Babu, C. Ganesh
Author_Institution
Dept. of ECE, Bannari Amman Inst. of Technol., Sathyamangalam, India
fYear
2014
fDate
27-28 Feb. 2014
Firstpage
1
Lastpage
6
Abstract
High speed content addressable memory design has high speed search function in a single clock. Parallel match line is used to compare. In robust Low power sense amplifier and high speed are highly sought-after in CAM designs. The value is given to search engine and its finds the value where its present. In the existing parity bit is introduced that leads to delay reduction at a cost of less than area. Furthermost in the proposed system PMOS transistor is used and cascaded and then output is found. Deadline is used in the proposed system to identify if the value is not present in the system.
Keywords
MOSFET; content-addressable storage; CAM design; PMOS transistor; computer aided manufacturing; content addressable memory; parallel match line; parity bit; positive metal oxide semiconductor; search function; sensing delay reduction; Associative memory; Computer aided manufacturing; Computer architecture; Delays; Microprocessors; Power demand; Sensors; PMOS; content addressable memory (CAM); match-line;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Communication and Embedded Systems (ICICES), 2014 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4799-3835-3
Type
conf
DOI
10.1109/ICICES.2014.7034040
Filename
7034040
Link To Document