• DocumentCode
    2611562
  • Title

    Improved backside hydrogenation on semicrystalline silicon solar cells by RF plasma

  • Author

    Soler, M.G. ; Pereyra, I. ; Fonseca, F. ; Andrade, A.

  • Author_Institution
    Lab. de Microelectron., Sao Paulo Univ., Brazil
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    650
  • Abstract
    The results obtained from the optimization of the backside hydrogenation on semicrystalline silicon solar cells by RF plasma process are described. Process variables were the hydrogen pressure and the treatment time. Solar cells, photocurrent, and photovoltage, were increased after treatment without generating front side defects, which reduce the fill factor, and consequently the conversion efficiency was improved. The experiments show that backside hydrogenation for semicrystalline silicon solar cells is very effective. The short-circuit current density shows relative increases of over 40% for cells with initial photocurrent values smaller than 18 mA/cm2 after the hydrogen treatment. For solar cells fabricated on solar grade substrates, photocurrent values increased even more, reaching +95%
  • Keywords
    elemental semiconductors; hydrogen; semiconductor doping; silicon; solar cells; AlGaAs; GaAs; InAlAs; InP; RF plasma; Si; backside hydrogenation; conversion efficiency; photocurrent; photovoltage; semicrystalline silicon solar cells; short-circuit current density; Hydrogen; Inductors; Passivation; Photoconductivity; Photovoltaic cells; Plasma immersion ion implantation; Plasma sources; Radio frequency; Silicon; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111700
  • Filename
    111700