DocumentCode :
2611565
Title :
Study of the Wigner function boundary conditions at different barrier heights
Author :
Savio, Andrea ; Poncet, Alain
Author_Institution :
Lyon Inst. of Nanotechnol., INSA Lyon, Villeurbanne, France
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
163
Lastpage :
166
Abstract :
In this work, we compute the Wigner function from wavefunctions obtained by solving the Schrödinger Equation. Our goal is to investigate issues that we encounter when simulating devices by solving the Wigner transport equation, namely the numerical discrepancies between the boundaries and the neighboring regions. In this paper, we focus on how the boundary conditions are affected by the barrier height in single- and double-barrier devices.
Keywords :
Schrodinger equation; Wigner distribution; semiconductor device models; wave functions; Schrodinger equation; Wigner function boundary conditions; Wigner transport equation; barrier heights; device simulation; double barrier device; numerical discrepancy; single barrier device; wavefunction; Boundary conditions; Equations; Mathematical model; Numerical models; Periodic structures; Resonant tunneling devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604539
Filename :
5604539
Link To Document :
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