Title :
Formation of PN junction with hydrogenated nicrocrystalline silicon
Author :
Kawabata, K. ; Morikawa, H. ; Ishihara, T. ; Sato, K. ; Sasaki, H. ; Itagaki, T. ; Deguchi, M. ; Hamamoto, S. ; Aiga, M.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The pn junction solar cells consisting of p-type hydrogenated microcrystalline silicon (p-μc-Si:H) and n-type single-crystalline silicon (n-c-Si) or cast polycrystalline silicon (n-cast-Si) were investigated. By using a thin p-μc-Si:H layer and inserting an oxide layer between the p-μc-Si:H and the n-c-Si or n-cast-Si, efficiencies as high as 14.27% for a p-μc-Si:H/n-c-Si cell and 13. 19% for a p-μc-Si:H/n-cast-Si cell were obtained. It was found that the interface oxide layer effectively improves the stability of a p-μc-Si:H/n-cast-Si cell
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; p-n homojunctions; silicon; solar cells; 13.9 percent; 14.27 percent; amorphous Si:H; cast polycrystalline silicon; hydrogenated nicrocrystalline silicon; interface oxide layer; n-type single-crystalline silicon; oxide layer; p-type hydrogenated microcrystalline silicon; pn junction formation; solar cells; stability; Capacitance; Costs; Doping; Electrodes; Photovoltaic cells; Silicon; Stability; Substrates; Transmission electron microscopy; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111702
