III-V MOSFET as advance low dimensional transistor

The workhorse of the present electronics industry, silicon MOSFET, is having a unique attribute; its logic characteristics improve as its dimensions are reduced. Without further reductions in operating voltage, future scaling may not be feasible. One possible solution is to introduce a new channel material in which charge carriers travel at a much higher velocity than in silicon and this would allow a reduction in voltage without a loss of performance. This factor has drowned the attention of research community around the world towards III-V compound semiconductors. No other family of materials currently being considered to replace the silicon channel in a MOSFET has such an impressive list of attributes. Today, III-V CMOS technology is a mainstream part of semiconductor research. Their future role has recently been recognized in the International Technology Roadmap for Semiconductors 7. The application of simulation tools in the development of new processes and novel device structures has become a worthwhile and an alternative to the experimental route. For all these tasks the technology computer-aided design (TCAD) was coined.