The Moisture Dependence of the Electrical Sheet Resistance of Aluminum Oxide Thin Films with Application to Integrated Moisture Sensors

The measurement of moisture inside integrated circuit packages for reliability purposes involves either destructive mass spectroscopic tests, measurement of the impedance between interdigitated electrode pairs, or measurement of the capacitance of a parallel plate capacitor with a porous upper electrode and a dielectric of anodized aluminum oxide. This paper reports the use of an integrated circuit that combines interdigitated electrodes with a pair of matched field-effect transistors to permit sensitive, quantitative measurement of the moisture dependence of the sheet resistance of very thin filmis of oxidized aluminum. Data analysis is based on an equivalent circuit model for the device. It is found that the room temlperature sheet resistance of a 1500 Å film varies from 2 × 1015 Ohms/sq. at an ambient dew point of ¿43°C to 2 × 1010 Ohms/sq. at a dew point of +22°C. The device retains useful sensitivity below dew points of ¿60°C, and because of the absence of a porous upper electrode, exh ibits rapid response to changes in ambient moisture. Fabrication details, reproducibility, hysteresis, and aging of these devices is discussed.