Title :
Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS
Author :
Heiser, T. ; Mesli, A. ; Siffert, P.
Author_Institution :
CRN, Strasbourg, France
Abstract :
Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. The optimum working conditions are discussed, and the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Gold- and iron-related defect interactions with grain boundaries are investigated by means of SMCTS
Keywords :
bicrystals; crystal defects; elemental semiconductors; grain boundaries; impurities; minority carriers; silicon; surface treatment; Au; Fe; Si; bicrystals; defects; grain boundaries; metallic impurities; scanning minority carrier transient spectroscopy; surface preparation; Capacitance; Electron traps; Employee welfare; Impurities; Laser beams; Semiconductor diodes; Silicon; Spatial resolution; Spectroscopy; Transient analysis;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111712
