DocumentCode :
2611807
Title :
A simple and efficient method for the calculation of carrier-carrier scattering in Monte-Carlo simulations
Author :
Lee, Wonsok ; Ravaioli, Umberto
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2010
fDate :
6-8 Sept. 2010
Firstpage :
131
Lastpage :
134
Abstract :
The analysis of the carrier-carrier scattering is getting more important and it can be done by the particle-particle-particle-mesh (P3M) algorithm. A problematic part of the algorithm is to avoid double-counting of the pair forces in short-range. Here, we solve the problem by introducing an efficient numerical method to the algorithm. The improvements in accuracy and applicability are confirmed with various test cases. In addition, the modified P3M method is integrated with a 3D ensemble Monte Carlo (EMC) simulator and applied to the device simulations. The results are compared with those of the PM (particle-mesh)-EMC approach, which reveals the limitations of the scattering rate based methods and the importance of the P3M method to treat carrier interactions.
Keywords :
Monte Carlo methods; impurity scattering; 3D ensemble Monte Carlo simulator; Monte-Carlo simulations; carrier interactions; carrier-carrier scattering analysis; device simulations; double-counting avoidance; modified P3M method; numerical method; particle-mesh-EMC approach; particle-particle-particle-mesh algorithm; scattering rate based methods; short-range pair forces; Electric fields; Electromagnetic compatibility; Force; Mathematical model; Monte Carlo methods; Numerical models; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2010.5604550
Filename :
5604550
Link To Document :
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