Developing InP/InGaAs detectors for laser radar systems

Author

Yeow, T.C.W. ; Craig, B.I.

Author_Institution

Land, Space and Optoelectron. Div., Defence Sci. & Technol. Organ., Salisbury, SA, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

59

Lastpage

62

Abstract

Describes efforts at DSTO to examine the application of InP/InGaAs array technology to laser radar sensors. The advantages of InP/InGaAs photodiode technology are its high sensitivity to the “eye-safe” laser wavelength, its high frequency operation and the maturity of the basic technology. A hybrid approach is taken in this study to fully optimise the photodetector and read-out modules in order to develop a real-time imaging laser radar system

Keywords

III-V semiconductors; arrays; gallium arsenide; indium compounds; infrared detectors; optical radar; p-i-n photodiodes; photodetectors; radar imaging; real-time systems; 1.54 mum; InP-InGaAs; InP/InGaAs array technology; InP/InGaAs detectors; InP/InGaAs photodiode technology; PIN photodiode; eye-safe laser wavelength; high frequency operation; high sensitivity; hybrid approach; laser radar sensors; laser radar systems; photodetector; read-out modules; real-time imaging laser radar system; Frequency; Indium gallium arsenide; Indium phosphide; Laser radar; Optical arrays; Photodiodes; Radar applications; Radar detection; Sensor arrays; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610067

Filename

610067