DocumentCode
2611845
Title
Influence of oxygen on polycrystalline silicon sheet [solar cells]
Author
Hide, I. ; Matsuyama, T. ; Suzuki, M. ; Yamashita, H. ; Suzuki, T. ; Moritani, T. ; Maeda, Y.
Author_Institution
Hoxan Corp., Sapporo, Japan
fYear
1990
fDate
21-25 May 1990
Firstpage
717
Abstract
The influence of oxygen on polycrystalline silicon produced by the spin-cast method was investigated. After the spin-cast process, solar cells are made using various thermal processes, such as diffusion. The oxygen concentrations in crystals prepared by the spin-cast process have been measured, and its effect on the characteristics of the crystal and solar cell properties was investigated. It was confirmed that if the oxygen concentration was more than 7.5×1017 atoms/cm 3 after the cell fabrication process, the resistivity of the crystal became higher than before the cell fabrication process. To obtain solar cells which have an energy conversion efficiency of more than 10%, the oxygen content should be less than 7.5×1017 atoms/cm3
Keywords
crystal defects; diffusion in solids; elemental semiconductors; impurities; oxygen; silicon; solar cells; Si:O; diffusion; fabrication; polycrystalline; resistivity; semiconductor; solar cells; spin-cast method; thermal processes; Atomic measurements; Boron; Coatings; Conductivity; Crystals; Energy conversion; Oxygen; Photovoltaic cells; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111714
Filename
111714
Link To Document