• DocumentCode
    2611845
  • Title

    Influence of oxygen on polycrystalline silicon sheet [solar cells]

  • Author

    Hide, I. ; Matsuyama, T. ; Suzuki, M. ; Yamashita, H. ; Suzuki, T. ; Moritani, T. ; Maeda, Y.

  • Author_Institution
    Hoxan Corp., Sapporo, Japan
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    717
  • Abstract
    The influence of oxygen on polycrystalline silicon produced by the spin-cast method was investigated. After the spin-cast process, solar cells are made using various thermal processes, such as diffusion. The oxygen concentrations in crystals prepared by the spin-cast process have been measured, and its effect on the characteristics of the crystal and solar cell properties was investigated. It was confirmed that if the oxygen concentration was more than 7.5×1017 atoms/cm 3 after the cell fabrication process, the resistivity of the crystal became higher than before the cell fabrication process. To obtain solar cells which have an energy conversion efficiency of more than 10%, the oxygen content should be less than 7.5×1017 atoms/cm3
  • Keywords
    crystal defects; diffusion in solids; elemental semiconductors; impurities; oxygen; silicon; solar cells; Si:O; diffusion; fabrication; polycrystalline; resistivity; semiconductor; solar cells; spin-cast method; thermal processes; Atomic measurements; Boron; Coatings; Conductivity; Crystals; Energy conversion; Oxygen; Photovoltaic cells; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111714
  • Filename
    111714