DocumentCode
2611867
Title
Basic Problems for Electromigration in VLSI Applications
Author
Ho, P.S.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
fYear
1982
fDate
30011
Firstpage
288
Lastpage
291
Abstract
The increasing electromigration requirements for interconnecting lines in VLSi technology have been assessed according to the trend in device scaling. Problems introduced by the decreasing line dimension and increasing current density are classified to be material-related or geometry-related. The nature of these problems are briefly discussed and their impact on device reliability is indicated.
Keywords
Conductors; Current density; Delay; Electromigration; FETs; Grain size; Heating; Integrated circuit interconnections; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.361947
Filename
4208465
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