Title :
Optimal design of III–V heterostructure MOSFETs
Author :
Nainani, Aneesh ; Yuan, Ze ; Krishnamohan, Tejas ; Saraswat, Krishna
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Sb based materials offer large VBO/CBO suitable for heterostructure design. The small CBO for InGaAs/InP NMOS can be overcome by intelligent use of modulation doping. A heterostructure design with TCAP=1nm can reduce the effect of Dit (Fig. 11), lead to an order of magnitude reduction in BTBT (Fig. 13) and a 100/50% improvement in the IDsat (Fig. 14) while maintaining good electrostatic control in terms of subthreshold swing and DIBL (Fig. 11).
Keywords :
III-V semiconductors; MOS integrated circuits; MOSFET; gallium arsenide; indium compounds; semiconductor doping; semiconductor heterojunctions; III-V heterostructure MOSFET; InGaAs-InP; NMOS; Sb based materials; VBO/CBO; conduction band offset; electrostatic control; heterostructure design; modulation doping; optimal design; valence band offset; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; MOS devices; Niobium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604557
