High quality GaAs/InGaAs/AlGaAs vertical-cavity surface-emitting lasers grown at a constant temperature by molecular beam epitaxy

Low threshold current GaAs/InGaAs vertical cavity surface emitting lasers could be successfully grown by molecular beam epitaxy at a fixed substrate temperature of 560°C which is compromised for InGaAs and AlGaAs materials, The thickness of each pair of layers in the device structures could be easily controlled using an infrared pyrometer system. Lasers with a three quantum well active region grown under such conditions show a threshold current density of 310 A cm^-2 and a maximum output power of 0.8 mW from a 15×15 μm² device at room temperature continuous wave operation