Title :
High speed transport and optoelectronic properties of InAs heterostructures
Author :
Inoue, M. ; Sakamoto, R. ; Yoh, K. ; Kohno, T. ; Kamiyoshi, T.
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Abstract :
Optoelectronic and electron transport properties of InAs-AlGaSb heterostructures grown by molecular-beam epitaxy (MBE) are presented. External field effects of the photoluminescence (PL) due to recombination between electrons and holes separately distributed near the interface are studied. The blue shift of PL spectra is attributed to the field-induced modulation of the carrier distributions and quantum energies. The hot-carrier transport properties in InAs heterostructures have been measured by pulsed Hall measurements. The electric field dependence of the average velocity and carrier density is discussed
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; carrier density; carrier mobility; electron-hole recombination; gallium compounds; hot carriers; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor junctions; InAs-AlGaSb heterostructures; MBE; PL spectra; average velocity; blue shift; carrier density; carrier distributions; electric field dependence; electron transport properties; field-induced modulation; high-speed transport; hot-carrier transport properties; molecular-beam epitaxy; optoelectronic properties; photoluminescence; pulsed Hall measurements; quantum energies; semiconductors; Bonding; Electrons; FETs; Lattices; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices; Radiative recombination; Spontaneous emission; Substrates;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170010
