• DocumentCode
    2612058
  • Title

    Preparation of nonstoichiometric CuInSe2 crystals by the Bridgman method

  • Author

    Yip, L. ; Weng, W. ; Shih, I. ; Champness, C.

  • Author_Institution
    Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    768
  • Abstract
    Monocrystals of CuInSe2 have been prepared for solar cell applications with nonstoichiometric compositions. The samples obtained with small deviation from stoichiometry were generally uniform in composition as determined by electron probe microanalysis. It was found that n-type conduction resulted only within a small compositional range, where the Se concentration was less than 50%. However, p-type materials were obtained over a wider compositional range, not only with excess of Se, but also with a deficiency of this element. X-ray diffraction showed that the samples were normally single-phase with the chalcopyrite structure and revealed no detectable shift of the diffraction peaks with variation in composition. In ingots with a large deviation from stoichiometry, localized regions of other phases were observed and examined by X-ray diffraction and electron probe microanalysis
  • Keywords
    copper compounds; crystal growth from melt; indium compounds; semiconductor growth; solar cells; ternary semiconductors; Bridgman method; CuInSe2; X-ray diffraction; chalcopyrite structure; electron probe microanalysis; n-type conduction; nonstoichiometric compositions; semiconductor growth; solar cells; Atom optics; Atomic measurements; Composite materials; Conductivity; Crystals; Electrons; Optical materials; Optical microscopy; Phase detection; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111724
  • Filename
    111724