DocumentCode
2612058
Title
Preparation of nonstoichiometric CuInSe2 crystals by the Bridgman method
Author
Yip, L. ; Weng, W. ; Shih, I. ; Champness, C.
Author_Institution
Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
fYear
1990
fDate
21-25 May 1990
Firstpage
768
Abstract
Monocrystals of CuInSe2 have been prepared for solar cell applications with nonstoichiometric compositions. The samples obtained with small deviation from stoichiometry were generally uniform in composition as determined by electron probe microanalysis. It was found that n-type conduction resulted only within a small compositional range, where the Se concentration was less than 50%. However, p-type materials were obtained over a wider compositional range, not only with excess of Se, but also with a deficiency of this element. X-ray diffraction showed that the samples were normally single-phase with the chalcopyrite structure and revealed no detectable shift of the diffraction peaks with variation in composition. In ingots with a large deviation from stoichiometry, localized regions of other phases were observed and examined by X-ray diffraction and electron probe microanalysis
Keywords
copper compounds; crystal growth from melt; indium compounds; semiconductor growth; solar cells; ternary semiconductors; Bridgman method; CuInSe2; X-ray diffraction; chalcopyrite structure; electron probe microanalysis; n-type conduction; nonstoichiometric compositions; semiconductor growth; solar cells; Atom optics; Atomic measurements; Composite materials; Conductivity; Crystals; Electrons; Optical materials; Optical microscopy; Phase detection; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111724
Filename
111724
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