Design and fabrication of heterostructure varactor diodes for millimeter and submillimeter wave multiplier applications

Author

Peatman, W.C.B. ; Crowe, T.W. ; Shur, M.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

49

Lastpage

57

Abstract

A high frequency diode for use as a frequency multiplier element in the millimeter and submillimeter wavelength region is discussed. The diode, called a high electron mobility varactor (HEMVAR) diode, consists of a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure, an ohmic contact to the 2-DEG, and appropriate isolation between the two contact pads. As a negative voltage is applied to the Schottky contact, then depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. The theory, design and fabrication of the HEMVAR multiplier diode are outlined, and the low frequency results for several prototype devices are presented

Keywords

Schottky effect; electron gas; multiplying circuits; solid-state microwave devices; submillimetre wave devices; varactors; Schottky contact; depletion layer; fabrication; frequency multiplier; heterostructure varactor diodes; high electron mobility varactor; high frequency diode; junction capacitance; millimetre wave type; nonlinear capacitance-voltage characteristic; ohmic contact; submillimeter wave multiplier; two-dimensional electron gas; Capacitance; Capacitance-voltage characteristics; Electron mobility; Fabrication; Frequency; Ohmic contacts; Schottky barriers; Schottky diodes; Varactors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170032

Filename

170032