Title :
Imaging Latch-Up Sites in LSI CMOS with a Laser Photoscanner
Author :
Burns, Daniel J. ; Kendall, Jeffrey M.
Author_Institution :
Rome Air Development Center, Reliability Physics Section, Griffiss AFB, NY 13441
Abstract :
A non-destructive laser photoscanning technique has been used to analyze electrically induced latch-up circuit paths in a variety of commercially available bulk CMOS devices. The method and results are compared to those reported by others using electron beam induced current and liquid crystal techniques.
Keywords :
Circuits; Current measurement; Electron beams; Large scale integration; Laser beams; Laser modes; Laser theory; Photoconductivity; Variable structure systems; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361971
