DocumentCode
2612233
Title
Imaging Latch-Up Sites in LSI CMOS with a Laser Photoscanner
Author
Burns, Daniel J. ; Kendall, Jeffrey M.
Author_Institution
Rome Air Development Center, Reliability Physics Section, Griffiss AFB, NY 13441
fYear
1983
fDate
30407
Firstpage
118
Lastpage
121
Abstract
A non-destructive laser photoscanning technique has been used to analyze electrically induced latch-up circuit paths in a variety of commercially available bulk CMOS devices. The method and results are compared to those reported by others using electron beam induced current and liquid crystal techniques.
Keywords
Circuits; Current measurement; Electron beams; Large scale integration; Laser beams; Laser modes; Laser theory; Photoconductivity; Variable structure systems; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361971
Filename
4208492
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