Bipolar resonant tunneling light emitting diodes

Author

Van Hoof, C. ; Genoe, J. ; Mertens, R. ; Borghs, G. ; Goovaerts, E.

Author_Institution

Interuniv. Micro-Electron. Center, Leuven, Belgium

fYear

1991

fDate

5-7 Aug 1991

Firstpage

58

Lastpage

65

Abstract

Electroluminescence originating from a resonant tunneling structure inside a GaAs p-n junction is investigated. The presence of electron and hole resonant tunneling is evident both in the electrical and in the spectral observations. Electron and hole accumulation inside the resonant tunneling structure is revealed from the electroluminescence linewidth. The electroluminescence intensity is strongly bias dependent and is correlated to the electron and hole population of the subbands in the resonant tunneling structure. Optical on-off ratios of up to 15:1 at 77 K between the electrical on- and off-resonance states are observed

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; light emitting diodes; luminescence of inorganic solids; resonant tunnelling devices; tunnelling; 77 K; GaAs; bias dependent; bipolar type; electroluminescence intensity; electroluminescence linewidth; electron accumulation; electron tunnelling; hole accumulation; hole resonant tunneling; light emitting diodes; optical on-off ratios; p-n junction; resonant tunneling structure; spectral observations; subbands; Charge carrier processes; Electroluminescence; Electron optics; Gallium arsenide; High speed optical techniques; Light emitting diodes; Optical buffering; Optical films; Resonant tunneling devices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170033

Filename

170033