Mitigation of process variation in MOSFET-based narrowband LNA

In this paper, 45 nm gate length MOSFET-based LNA, operating at 5 GHz, is studied for the impact of process variation on LNA performance metrics such as input impedance, gain and noise figure. Gate length, channel width, gate oxide thickness, channel doping concentration, and source/drain doping concentration are considered as varying parameters. The effect of these variations on the input impedance (50 μ purely real) of LNA is compensated by substrate/body bias of bulk MOSFET. Most of the cases are mitigated using this technique.