• DocumentCode
    2612277
  • Title

    The origin of the temperature dependence in resonant tunneling transport

  • Author

    Shen, G.D. ; Xu, D.X. ; Willander, M. ; Hansson, G.V.

  • Author_Institution
    Dept. of Phys., Linkoping Univ., Sweden
  • fYear
    1991
  • fDate
    5-7 Aug 1991
  • Firstpage
    84
  • Lastpage
    93
  • Abstract
    The temperature dependence of transport in resonant tunneling devices is studied theoretically and compared with experiments. The most contributions come from the one-dimensional carrier energy distribution factor, the position of the Fermi energy, and the temperature dependences of some physical parameters such as Fermi energy, effective mass, and carrier mobility. When these physical factors are considered, the experimental results, including both increasing and decreasing peak current with temperature, can be explained in a coherent way
  • Keywords
    Fermi level; carrier mobility; effective mass (band structure); resonant tunnelling devices; semiconductor junctions; temperature; tunnelling; Fermi energy; carrier mobility; effective mass; one-dimensional carrier energy distribution factor; physical parameters; resonant tunneling devices; resonant tunneling transport; temperature dependence; Effective mass; Frequency; Gallium arsenide; Germanium silicon alloys; Photonic band gap; Physics; Probability; Resonant tunneling devices; Silicon germanium; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Print_ISBN
    0-7803-0491-8
  • Type

    conf

  • DOI
    10.1109/CORNEL.1991.170037
  • Filename
    170037