Inclusion of the inertial effects in the drift-diffusion equation

The authors point out that when the potential across the transit region of a device varies by kT/2|q| volts or more within a mean free path length the charge carrier inertia significantly influences the current transport. The conventional drift-diffusion model is corrected to include such inertial effects and obtain a unified transport model. Device modeling has been done using the modified transport model and used in the case of an n⁺nn⁺ structure to demonstrate the importance of the inertial or the ballistic effects on the carrier motion for very narrow potential barriers. The results show that the uniform transport model gives improved results compared to the drift-diffusion model