DocumentCode :
2612301
Title :
A systematic method for nonlinear analysis of a class of FET circuits
Author :
Losada, Carlos A. ; Haigh, David G. ; Radmore, Paul M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
fYear :
1993
fDate :
3-6 May 1993
Firstpage :
2086
Abstract :
The square-law relationship between the drain current and the gate-source voltage of an FET implies that a circuit comprising FETs has, in general, a nonlinear relationship between its port variables. The small-signal admittance matrix analysis technique is extended to allow systematic by-hand analysis of the linear and nonlinear behavior of FET circuits. A constraint on circuit architecture which ensures that the resulting network functions are rational is derived. Examples of analysis are given. The analysis method is a valuable tool for the development of novel circuits, both linear (e.g., amplifiers, isolators, circulators, signal splitters, and combiners) and nonlinear (e.g., multipliers and frequency doublers). It can also allow cataloging and analysis of all possible circuits of a given complexity
Keywords :
coupled circuits; electric admittance; field effect transistor circuits; multiport networks; nonlinear network analysis; FET circuits; circuit architecture; drain current; gate-source voltage; network functions; nonlinear analysis; port variables; small-signal admittance matrix analysis; square-law relationship; CMOS technology; Capacitors; Coupling circuits; FET circuits; Gallium arsenide; HEMTs; Isolators; MODFETs; MOSFETs; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
Type :
conf
DOI :
10.1109/ISCAS.1993.394167
Filename :
394167
Link To Document :
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