DocumentCode
2612307
Title
Wire Bond Integrity Test Chip
Author
Blish, R.C., II ; Parobek, L.
Author_Institution
Intel Corporation, 3056 Bowers Avenue, Santa Clara, CA 95150
fYear
1983
fDate
30407
Firstpage
142
Lastpage
147
Abstract
A special test chip and bonding diagram has been designed to nondestructively evaluate wire bond integrity of plastic encapsulated IC packages. Differential Kelvin resistance measurements as a function of bake time provide a quantitative measure of bond degradation. It was found that a 20 m¿ resistance increase corresponds to unacceptable performance in bond pull and ball shear. A hypothesis is advanced to explain the development of bimodal distributions of bond resistance change and bond pull strengths, which develop after long bake periods. This method was used for optimization of gold wire bonding to pure aluminum and silicon-doped aluminum, and for encapsulant selection.
Keywords
Aluminum; Bonding; Electrical resistance measurement; Integrated circuit testing; Kelvin; Nondestructive testing; Plastic integrated circuit packaging; Semiconductor device measurement; Time measurement; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361975
Filename
4208496
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